doping uniformity

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• doping uniformity — legiravimo vienodumas statusas T sritis radioelektronika atitikmenys: angl. doping uniformity vok. Dotierungsgleichmäßigkeit, f rus. равномерность распределения легирующей примеси, f pranc. uniformité de dopage, f …   Radioelektronikos terminų žodynas

• Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially …   Wikipedia

• Dotierungsgleichmäßigkeit — legiravimo vienodumas statusas T sritis radioelektronika atitikmenys: angl. doping uniformity vok. Dotierungsgleichmäßigkeit, f rus. равномерность распределения легирующей примеси, f pranc. uniformité de dopage, f …   Radioelektronikos terminų žodynas

• legiravimo vienodumas — statusas T sritis radioelektronika atitikmenys: angl. doping uniformity vok. Dotierungsgleichmäßigkeit, f rus. равномерность распределения легирующей примеси, f pranc. uniformité de dopage, f …   Radioelektronikos terminų žodynas

• uniformité de dopage — legiravimo vienodumas statusas T sritis radioelektronika atitikmenys: angl. doping uniformity vok. Dotierungsgleichmäßigkeit, f rus. равномерность распределения легирующей примеси, f pranc. uniformité de dopage, f …   Radioelektronikos terminų žodynas

• равномерность распределения легирующей примеси — legiravimo vienodumas statusas T sritis radioelektronika atitikmenys: angl. doping uniformity vok. Dotierungsgleichmäßigkeit, f rus. равномерность распределения легирующей примеси, f pranc. uniformité de dopage, f …   Radioelektronikos terminų žodynas

• Germany — /jerr meuh nee/, n. a republic in central Europe: after World War II divided into four zones, British, French, U.S., and Soviet, and in 1949 into East Germany and West Germany; East and West Germany were reunited in 1990. 84,068,216; 137,852 sq.… …   Universalium

• Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… …   Wikipedia

• France — /frans, frahns/; Fr. /frddahonns/, n. 1. Anatole /ann nann tawl /, (Jacques Anatole Thibault), 1844 1924, French novelist and essayist: Nobel prize 1921. 2. a republic in W Europe. 58,470,421; 212,736 sq. mi. (550,985 sq. km). Cap.: Paris. 3.… …   Universalium

• Copper indium gallium selenide solar cells — Copper indium gallium selenide (CuIn1 xGaxSe2 or CIGS) is a direct bandgap semiconductor useful for the manufacture of solar cells. Because the material strongly absorbs sunlight, a much thinner film is required than of other semiconductor… …   Wikipedia

• Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia